Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices
Reexamination Certificate
2007-11-06
2007-11-06
Dougherty, Thomas M. (Department: 2834)
Electrical generator or motor structure
Non-dynamoelectric
Piezoelectric elements and devices
C310S364000
Reexamination Certificate
active
11304938
ABSTRACT:
A piezoelectric device including: a substrate; a first conductive layer formed over the substrate, the first conductive layer including a conductive oxide layer formed of a (001) preferentially oriented lanthanum nickelate, and the lanthanum nickelate having oxygen deficiency; a piezoelectric layer formed over the first conductive layer and including a piezoelectric having a perovskite structure; and a second conductive layer electrically connected with the piezoelectric layer.
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Communication from European Patent Office regarding related application.
“Microstructures and Electrical Characteristics of PZT Thin Films Deposited on Stainless Steel Using a LaNiO3 Buffer Layer”, Yun Liu and Chao-Nan Xu, Asian Ceramic Science for Electronics 1, National Institute of Advanced Industrial Science and Technology, Kyushu, Shuku, 807-1, Tosu, Saga, 841-0052 Japan (pp. 117-121).
“Structural, dielectric, and ferroelectric properties of compositionally graded (Pb, La) TiO3thin films with conductive LaNiO3bottom electrodes”, Applied Physics Letters, vol. 77, No. 7, Dinghua Bao, Mizutani, Yao and Zhang, Aug. 14, 2000 (pp. 1041-1043).
“Preparation and characterization of preferred oriented PZT films on amorphous substrates”, Yun Liu, Chao-Nan Xu, T. Watanabe, Kyushu National Industrial Research Institute, 807-1, Shuku, Tosu, Saga, 841-0052, Japan (pp. 4129-4132).
Electrical properties and crystal structure of (Ba, Sr) TiO3films prepared at low temperatures on a LaNiO3electrode by radio-frequency magnetron sputtering, Chung Ming Chu and Pang Lin, 1997 American Institute of Physics, Appl. Phys. Lett. 70 (2), Jan. 13, 1997 (pp. 249-251).
“Effect of textured LaNiO3electrode on the fatigue improvement of Pb(Zr0.53Ti0.47) thin films”, Ming-Sen Chen, Tai-Bor Wu and Jenn-Ming Wu,1996 American Institute of Physics, Appl. Phys. Lett. 68 (10), Mar. 4, 1996 (pp. 1430-1432).
Oxygen Nonstoichiometry and Its Effect on the Structure of LaNiO3, Soma Rakshit and P.S. Gopalakrishnan, Journal of Solid State Chemistry 110, 28-31 (1994) (pp. 28-31).
Microstructural Characterization of the LaNiO3−γSystem, M.J. Sayagues, M. Vallet-Regi, A. Caneiro, and J.M. Gonzalez-Calbet, Journal of Solid State Chemistry 110, 295-304 (1994) (pp. 295-304).
Influence of oxygen stoichiometry on the electronic properties of La4Ni3O10± δ, M.D. Carvalho, M. M. Cruz, A. Wattiaux and J. M. Bassat, F. M. A. Costa, M. Godinho, Journal of Applied Physics, vol. 88, No. 1, Jul. 2000 (pp. 544-549).
“Low-Temperature growth of epitaxial LaNiO3/Pb(Zr0.52Ti0.48) O3/LaNiO3on Si(001) by pulsed-laser deposition” Wenbin Wu, K.H. Wong and C.L. Choy, 2000 American Vacuum Society, J. Vac. Sci. Technol.A 18(1), Jan./Feb. 2000, (pp. 79-82).
Communication from European Patent Office regarding related application, Apr. 25, 2006.
“Microstructures and Electrical Characteristics of PZT Thin Films Deposited on Stainless Steel Using a LaNiO3 Buffer Layer”, Yun Liu and Chao-Nan Xu, Asian Ceramic Science for Electronics I, National Institute of Advanced Industrial Science and Technology, Kyushu, Shuku, 807-1, Tosu, Saga, 841-0052 Japan (pp. 117-121) 2002.
“Structural, dielectric, and ferroelectric properties of compositionally graded (Pb, La) TiO3thin films with conductive LaNiO3bottom electrodes”, Applied Physics Letters, vol. 77, No. 7, Dinghua Bao, Mizutani, Yao and Zhang, Aug. 14, 2000 (pp. 1041-1043).
“Preparation and characterization of preferred oriented PZT films on amorphous substrates”, Yun Liu, Chao-Nan Xu, T. Watanabe, Kyushu National Industrial Research Institute, 807-1, Shuku, Tosu, Saga, 841-0052, Japan (pp. 4129-4132) Sep. 1, 1999.
Electrical properties and crystal structure of (Ba, Sr) TiO3films prepared at low temperatures on a LaNiO3electrode by radio-frequency magnetron sputtering. Chung Ming Chu and Pang Lin, 1997 American Institute of Physics, Appl. Phys. Lett. 70 (2), Jan. 13, 1997 (pp. 249-251).
Iwashita Setsuya
Kijima Takeshi
Ohashi Koji
Dougherty Thomas M.
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
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