Photoelectrochemical plating of silver

Details Photoelectrochemical plating of silver Photoelectrochemical plating of silver

1982-09-03

1984-01-10

Tufariello, T. M.

Chemistry: electrical and wave energy

Processes and products

204 46R, C25D 502, C25D 346

Patent

active

044251963

ABSTRACT:
A process is described for plating silver on metallic surfaces electrically attached to a compound semiconductor. This process involves a photoelectrochemically induced oxidation reaction in which the compound semiconductor is oxidized and reduction to metallic silver takes place on the metallic surface electrically connected to the semiconductor. This procedure is particularly valuable where silver is to be plated in small holes or crevices in the semiconductor structure. It is particularly valuable because plating is specific to the metallic surface and does not occur on the semiconductor surface. It is useful in providing low inductance electrical connections to various parts of semiconductor devices such as in the source for gallium arsenide field effect transistors. Silver is particularly valuable in such applications because of its chemical inertness, high electrical conductivity and exceptionally high thermal conductivity which permits high transistor power handling capabilities.

REFERENCES:
patent: 3013955 (1961-12-01), Roberts
patent: 4144139 (1979-03-01), Durkee
patent: 4251327 (1981-02-01), Grenou
Patent Application Buckley et al. 3-15-6-6-6 Ser. No. 272,517, filed 6-11-81.

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