Method of semiconductor device isolation employing polysilicon l

Details Method of semiconductor device isolation employing polysilicon l Method of semiconductor device isolation employing polysilicon l

1994-03-02

1995-08-01

Fourson, George

Fishing, trapping, and vermin destroying

437 72, H01L 2176

Patent

active

054380162

ABSTRACT:
A process for forming field oxide on a semiconductor substrate having reduced field oxide thinning comprises forming an oxide layer over a semiconductor substrate, and forming a protective layer over the oxide layer. A mask is formed over the protective layer thereby forming exposed and covered regions of the protective layer. The exposed portions of the protective layer are removed to form at least first, second, and third disconnected protective structures, wherein the distance between the first and second protective structures is smaller than the distance between the second and third protective structures. The oxide layer and a portion of the substrate between the protective structures is removed to expose a portion of the substrate. A blanket polycrystalline silicon (poly) layer is formed over the substrate, and the poly layer is isotropically etched to remove the poly from between the second and third protective structures and to leave a portion of the poly between the first and second structures. The poly between the first and second protective structures is oxidized to form regions of field oxide having a substantially uniform thickness across the substrate. The oxidation between the first and second protective structures can also include substrate oxidation once the poly is consumed.

REFERENCES:
IBM Technical Disclosure Bulletin, vol. 29, No. 2, Jul. 1986 pp. 943-946.
Park et al., "A Novel LOCOS-Type Isolation Technology Free of the Field Oxide Thinning Effect", Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 528-530.

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