Method of selectively exposing a material using a photosensitive

Details Method of selectively exposing a material using a photosensitive Method of selectively exposing a material using a photosensitive

1996-06-24

1998-09-22

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430394, 430396, G03F 720

Patent

active

058112227

ABSTRACT:
A method of selectively exposing a material over a substrate is disclosed. The method includes forming a material over a semiconductor substrate, forming a photosensitive layer over the material, projecting a first image pattern onto the photosensitive layer that defines a first boundary for the material, projecting a second image pattern onto the photosensitive layer after projecting the first image pattern such that the second image pattern partially overlaps the first image pattern and defines a second boundary for the material, and removing portions of the photosensitive layer corresponding to the first and second image patterns. Preferably, the first and second image patterns are essentially identical to and laterally shifted with respect to one another. In this manner, the photosensitive layer selectively exposes the material adjacent to the first and second boundaries while covering the material between the first and second boundaries, and the distance between the first and second boundaries decreases as the overlap between the first and second image patterns decreases. Advantageously, the first and second boundaries can be closer than the minimum resolution of the photolithographic system used to pattern the photosensitive layer.

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M. Ono et al., "A 40 nm Gate Length n-Mosfet," IEEE Transactions on Electron Devices, vol. 42, No. 10, (1995), pp. 1822-1830.

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