Method of removing germanium particles precipitated in an alumin

Details Method of removing germanium particles precipitated in an alumin Method of removing germanium particles precipitated in an alumin

1992-06-04

1994-02-01

Quach, T. N.

Fishing, trapping, and vermin destroying

437197, 437192, 748DIG58, H01L 21283

Patent

active

052832066

ABSTRACT:
A method of removing Ge particles precipitated in an Al/Ge alloy film formed over the surface of a substrate in fabricating a semiconductor device forms a Cu film over the surface of the Al/Ge alloy film in a laminate structure, subjects the laminate structure to heat treatment to make the Ge particles migrate toward the Cu film and to make the Ge particles and the Cu film interact to produce a Ge/Cu compound layer. Thus, the Ge particles precipitated in the Al/Ge alloy film are removed from the Al/Ge alloy film and, consequently, the contact resistance of the Al/Ge alloy film is reduced and the migration resistance of the Al/Ge alloy film is enhanced.

REFERENCES:
patent: 3222630 (1965-12-01), Gorman
patent: 4908685 (1990-03-01), Shibasaki et al.
patent: 4965656 (1990-10-01), Koubuchi et al.

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