Method of reducing contact resistance at silicide/active area in

Details Method of reducing contact resistance at silicide/active area in Method of reducing contact resistance at silicide/active area in

1991-09-23

1992-04-28

Quach, T. N.

Fishing, trapping, and vermin destroying

437 24, 437 27, 148DIG19, H01L 21283, H01L 21265

Patent

active

051089548

ABSTRACT:
Disclosed is a semiconductor processing method for reducing contact resistance between an active area and an overlying silicide resulting from diffusion of an impurity from the active area into the silicide. The method comprises implanting germanium through the contact opening and into the active area of the wafer to a peak density at an elevation which is at or above the elevation of the peak density of the conductivity enhancing impurity. A layer of metal is applied atop the wafer and into the contact opening to contact the active area. The metal and silicon within the contact opening are annealed to form a metal silicide. The annealing step consumes elemental silicon into the wafer to an elevation which is at or above the elevation of the germanium peak density. The germanium restricts diffusion of the conductivity enhancing impurity therethrough during the silicide anneal.

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