Method of polishing a multi-layer substrate

Details Method of polishing a multi-layer substrate Method of polishing a multi-layer substrate

2005-03-15

2005-03-15

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000, C252S079100

Reexamination Certificate

active

06867140

ABSTRACT:
The invention provides a method for polishing one or more layers of a multi-layer substrate that includes a first metal layer and a second layer comprising (i) contacting the first metal layer with a polishing system comprising a liquid carrier, at least one oxidizing agent, at least one polishing additive that increases the rate at which the system polishes at least one layer of the substrate, at least one stopping compound with a polishing selectivity of the first metal layer:second layer of at least about 30:1, wherein the stopping compound is a cationically charged nitrogen containing compound selected from compounds comprising amines, imines, amides, imides, and mixtures thereof, and a polishing pad and/or an abrasive, and (ii) polishing the first metal layer with the system until at least a portion of the first metal layer is removed from the substrate.

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