Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1997-03-21

1999-01-26

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438738, 438697, 438197, H01L 2100

Patent

active

058638377

ABSTRACT:
This invention is related to a method of manufacturing a semiconductor including a MOSFET.
The method comprises a step of forming an opening in a first insulating layer covering a second insulating layer and a surface of semiconductor substrate, so that the second insulating layer covering a gate electrode, and a surface of a source region and a drain region are exposed, a step of burying a conductive material in the opening, and a step of etching the conductive material so that a surface of the second insulating layer is exposed.

REFERENCES:
patent: 4822754 (1989-04-01), Lynch et al.
patent: 5231051 (1993-07-01), Baldi et al.

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