Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2004-09-21

2008-08-19

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S633000, C257SE21304

Reexamination Certificate

active

07413989

ABSTRACT:
A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.

REFERENCES:
patent: 5980775 (1999-11-01), Grumbine et al.
patent: 6316366 (2001-11-01), Kaufman et al.
patent: 2003/0087590 (2003-05-01), Yang et al.
patent: 10-242090 (1998-09-01), None
patent: 11-176777 (1999-07-01), None
patent: 2000-091277 (2000-03-01), None
patent: 2003-77919 (2003-03-01), None
Notification of Reasons for Rejection in copending Japanese Application No. 2004-029552 and English translation thereof.
First Office Action in copending Chinese Patent Application No. 200510007566.8 and English translation thereof.

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