Method for passivating an undercut in semiconductor device prepa

Details Method for passivating an undercut in semiconductor device prepa Method for passivating an undercut in semiconductor device prepa

1985-03-29

1987-05-26

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29576B, 29578, 29589, 29571, H01L 2158, H01L 2160

Patent

active

046673954

ABSTRACT:
A method, useful in fabricating semiconductor integrated circuits, for passivating an undercut formed by etch-back of a silicon dioxide layer under a diverse insulator film is disclosed. The method includes the step of coating the device with a thin, conformal film to a thickness sufficient only to line, without refilling, the lateral walls of the undercut region.

REFERENCES:
patent: 3906620 (1975-10-01), Angai et al.
patent: 4497107 (1985-02-01), Cogan
patent: 4601781 (1986-07-01), Mercier et al.
Antipav et al., "Reliable Passivation . . . Diodes" IBM TDB vol. 25, No. 9, Feb. '83 pp. 4782-4784.
Jambotkar, C. "Method to Realize Submicrometer-Wide Images" IBM TDB vol. 25, No. 9, Feb. 83 pp. 4768-4772.
Ghondi, VLSI Fabrication Principles Silicon and Gallium Arsenide, John Wiley & Sons, New York, 1983, pp. 354, 355 and 427-429.

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