Method for making a silicon-on-insulator substrate

Details Method for making a silicon-on-insulator substrate Method for making a silicon-on-insulator substrate

1986-01-13

1990-01-02

Doll, John

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156613, 156614, 156DIG64, 156DIG99, C30B 2504

Patent

active

048910929

ABSTRACT:
A mask of insulating material is formed on the major surface of a semiconductor wafer, the mask including apertures to the wafer surface. A layer of monocrystalline silicon is then formed through the apertures and over the mask. The silicon within each aperture is next replaced with an insulating plug and epitaxial silicon is grown from the remaining portions of the monocrystalline silicon layer so as to form a continuous monocrystalline silicon sheet overlying the mask and plug.

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patent: 4578142 (1986-03-01), Corbey et al.
Kooi et al., Locos Devices, Philips Resources Reports No. 26, 1971, pp. 166 to 180.
Ghardhi, VLSI Fabrication Principles, John Wiley and Sons Inc., 1983, pp. 576-582.

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