Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1994-07-21
1997-05-13
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438586, H01L 21265
Patent
active
056292180
ABSTRACT:
A thin film transistor and method for forming the same are disclosed. The transistor comprises a gate conductor (14) and a gate insulator (16). A semiconductor channel layer (18) is formed adjacent the gate insulator (16). A mask block (22) is formed covering a channel region (30) in the channel layer (18). A source region (26) and a drain region (28) are formed in the channel layer (18) adjacent opposite ends of the mask block (22). Conductive bodies (32) and (34) are formed in contact with source region (26) and drain region (28), respectively. Electric contacts (42) and (44) are then formed in contact with conductive bodies (32) and (34), respectively.
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Brady III Wade James
Donaldson Richard L.
Dutton Brian K.
Matsil Ira S.
Niebling John
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