Method for fabricating integrated circuit arrangements, and...

Details Method for fabricating integrated circuit arrangements, and... Method for fabricating integrated circuit arrangements, and...

2005-03-08

2005-03-08

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S692000, C438S627000, C438S631000, C438S637000, C438S640000, C438S674000

Reexamination Certificate

active

06864175

ABSTRACT:
The invention relates to a method in which an eclectically nonconductive mask layer is applied to an electrically conductive contact layer which is supported by a substrate layer. A free space is made in the mask layer. Then, a plurality of layers are electrochemically deposited in the free space. Then, layers are applied above the layer which was deposited last. Then, in a removal process, the mask layer is removed down to the height of the top layer.

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Yang, et al.;Shape Evolution of Electrodeposited Bumps with Deep Cavity; J. Electrochem, Soc., vol. 145, No. 9, Sep. 1998.

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