Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-06-14
2005-06-14
Everhart, Caridad M. (Department: 2825)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S014000, C438S697000, C438S945000, C451S029000, C451S030000
Reexamination Certificate
active
06905966
ABSTRACT:
A method for estimating relative remaining film thickness distribution (CMP pattern ratio distribution) among sparse and dense active regions after CMP on the basis of the layout of a mask pattern in a one-chip mask region. In each mask pattern, a reduced region is created by removing an area of a predetermined width from the mask pattern along the edge of the mask pattern. Then, the one-chip mask region is segmentalized into predetermined regions to create a plurality of segmentalized regions. On each of the segmentalized regions, the area ratio of all reduced regions occupying a region that includes a segmentalized region at a fixed position and has the same size and shape as those of the foregoing one-chip mask region is acquired. Based on the acquired area ratio, the distribution of remaining film thickness of a surface protection film in the one-chip mask region, i.e., the CMP pattern ratio, is acquired.
REFERENCES:
patent: 5948573 (1999-09-01), Takahashi
patent: 2002/0090745 (2002-07-01), Lin et al.
patent: 2001-313276 (2001-11-01), None
Everhart Caridad M.
Oki Electric Industry Co. Ltd.
Volentine Francos & Whitt PLLC
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