Method and system for providing an interconnect having reduced f

Details Method and system for providing an interconnect having reduced f Method and system for providing an interconnect having reduced f

1997-10-29

2000-01-04

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 257751, 257752, 257762, H01L 2128, H01L 21283, H01L 2144, H01L 21441

Patent

active

060109602

ABSTRACT:
A system and method for providing an interconnect on a substrate is disclosed. The method and system include providing a first layer, a first barrier layer, and a second layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration. The first barrier layer is disposed between the first layer and the second layer. In a second aspect, the method and system include providing a first layer and a first barrier layer. The first layer is subject to electromigration and has a thickness. The thickness of the first layer is smaller than what is required to support formation of a void. The first barrier layer is resistant to electromigration.

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