Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-11-29
1998-09-29
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
H01L 214763
Patent
active
058145605
ABSTRACT:
A method is provided for forming metal interconnect structures which resists the formation of pile-ups caused by electromigration. Each metal interconnect structure includes an aluminum interconnect sandwiched between two refractory metal layers. The method of the present invention involves forming a layer of aluminum intermetallic alloy on the sidewalls of the aluminum interconnects. The layer of aluminum intermetallic alloy provides reinforcement for the sidewalls. The layer of aluminum intermetallic alloy comprises aluminum-refractory metal alloy. The aluminum-refractory metal alloy is formed by reacting the exposed aluminum on the sidewalls with refractory metal-containing precursor material. After the formation of the layer of aluminum intermetallic alloy the sidewalls of the aluminum interconnects, the formation of pile-ups will be suppressed. Thus, the lifetime of the aluminum interconnects is extended. Accordingly, the method of the present invention improves the reliability and wear resistance of integrated circuits employing aluminum interconnects.
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patent: 5476815 (1995-12-01), Kawasumi
patent: 5571751 (1996-11-01), Chung
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Chan Simon S.
Cheung Robin W.
Gupta Subhash
Advanced Micro Devices , Inc.
Berry Renee R.
Bowers Jr. Charles L.
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