Manufacture of semiconductor device having insulation film...

Details Manufacture of semiconductor device having insulation film... Manufacture of semiconductor device having insulation film...

2007-08-14

2007-08-14

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21565

Reexamination Certificate

active

11050832

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device which can form, as a gate insulation film, an oxide film of Hf1-xAlx(0<x<0.3) having a small shift in flat band voltage. The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, which contains metal compound of Hf and metal compound of Al in carrier gas, and hydrogen gas to a surface of the heated silicon substrate, and depositing on the silicon substrate an HfAlO film as a high-dielectric-constant insulation film having a higher specific dielectric constant than that of silicon oxide, by thermal CVD.

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Office Action dated Apr. 13, 2007 issued in corresponding Japan Application No. 2004-569357.

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