Lateral bipolar transistor for integrated circuits and method fo

Details Lateral bipolar transistor for integrated circuits and method fo Lateral bipolar transistor for integrated circuits and method fo

1975-07-10

1976-06-29

James, Andrew J.

357 15, 357 34, 357 23, H01L 2972, H01L 2948, H01L 2956, H01L 2964

Patent

active

039673073

ABSTRACT:
An integrated circuit and method for forming the same including a lateral bipolar transistor having an increased current gain. Floating islands are formed in the emitter of the lateral transistor to have a conductivity type opposite that of the emitter and which act to channel current towards the periphery of the emitter, thereby directing the current towards the collector region. In addition, the integrated circuit includes a buried layer underlying the lateral transistor with the buried layer pinched very thin along a region which outlines the edge of the emitter for enhancing lateral current flow.

REFERENCES:
patent: 3280391 (1966-10-01), Bittmann
patent: 3479233 (1969-11-01), Lloyd
patent: 3519898 (1970-07-01), Nakatani
patent: 3704399 (1972-11-01), Glaise
patent: 3742592 (1973-07-01), Rizzi et al.
patent: 3913123 (1975-10-01), Masaki et al.

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