Patent
1982-05-20
1989-02-07
James, Andrew J.
357 59, 357 2, H01L 2978
Patent
active
048035289
ABSTRACT:
A method for fabricating adjacent electrically conducting and insulating regions in a silicon film is described. A substantially insulating layer of oxygenated, N or P doped, non-single crystalline silicon film is first formed. The film is then selectively laser irradiated so as to form an irradiated portion which is substantially conducting.
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Davis Jr. James C.
General Electric Company
James Andrew J.
Prenty Mark
Steckler Henry I.
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