Insulating film having electrically conducting portions

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 59, 357 2, H01L 2978

Patent

active

048035289

ABSTRACT:
A method for fabricating adjacent electrically conducting and insulating regions in a silicon film is described. A substantially insulating layer of oxygenated, N or P doped, non-single crystalline silicon film is first formed. The film is then selectively laser irradiated so as to form an irradiated portion which is substantially conducting.

REFERENCES:
patent: 3585088 (1971-06-01), Schwuttke et al.
patent: 3634927 (1972-01-01), Neale et al.
patent: 3771026 (1973-11-01), Asai et al.
patent: 4014037 (1977-03-01), Matsushita et al.
patent: 4037306 (1977-07-01), Gutteridge et al.
patent: 4048649 (1977-09-01), Bohn
patent: 4059461 (1977-11-01), Fan et al.
patent: 4062034 (1977-12-01), Matsushita et al.
patent: 4063967 (1977-12-01), Graul et al.
patent: 4084986 (1978-04-01), Aoki et al.
patent: 4086613 (1978-04-01), Biet et al.
patent: 4127931 (1978-12-01), Shiba
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4154625 (1979-05-01), Golovchenko et al.
patent: 4193183 (1980-03-01), Klein
patent: 4198246 (1980-04-01), Wu
patent: 4214918 (1980-07-01), Gat et al.
patent: 4229502 (1980-10-01), Wu et al.
patent: 4234358 (1980-11-01), Celler et al.
patent: 4240843 (1980-12-01), Celler et al.
patent: 4240843 (1980-12-01), Celler et al.
patent: 4243433 (1981-01-01), Gibbons
patent: 4267011 (1981-05-01), Shibata et al.
patent: 4269636 (1981-05-01), Rivoli et al.
patent: 4272880 (1981-06-01), Pashley
patent: 4295924 (1981-10-01), Garnache et al.
patent: 4302763 (1981-11-01), Ohuchi et al.
patent: 4309224 (1982-01-01), Shibata
patent: 4409609 (1983-10-01), Fukuda
Structure of Crystallized Layers by Lasser Annealing of<100> and <111> Self-Implanted Silicon Samples, G. Foti et al., Applied Physics, 15, (1978), pp. 365-369.
Regrowth of Amorphous Films, S. S. Lau, J. Vac. Sci. Technol., vol. 15, (1978), pp. 1656-1661.
Ion-Implantation Gettering at Elevated Temperatures, Beyer et al., IBM Technical Disclosure Bulletin, vol. 20, (1978), p. 3122.
By Laser Irradiation, C. Celler et al., Applied Physics Letter, 32(8), Apr. 15, 1978, pp. 464-466.
Laser-Programmable Variable-Value Resistor, B. K. Aggarwal, IBM Technical Disclosure Bulletin, vol. 21, No. 8, Jan. 1979, pp. 3271-3272.
Application of Laser Processing for Improved Oxides Grown from Polysilicon, G. Yaron, IEDM Technical Digest, International Electron Devices Meeting, Wash. D.C., Dec. 1979, pp. 220-223.
Writing SiO.sub.2 on a Si Wafer, C-A. Chang, IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov. 1977, p. 2459.
Laser Annealing of Arsenic Implanted Silicon, J. Krynicki et al., Physics Letters, vol. 61A, No. 3, May 2, 1977, pp. 181-182.
A Comparative Study of Laser and Thermal Annealing of Boron-Implanted Silicon, J. Narayan et al., Journal of Applied Physics, vol. 49, No 7, Jul. 1978, pp. 3912-3917.
Laser Cold Processing Takes the Heat Off Semiconductors, R. A. Kaplan et al., Electronics, Feb. 28, 1980, pp. 137-142.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Insulating film having electrically conducting portions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulating film having electrically conducting portions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating film having electrically conducting portions will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1087676

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.