In situ plasma pre-deposition wafer treatment in chemical vapor

Details In situ plasma pre-deposition wafer treatment in chemical vapor In situ plasma pre-deposition wafer treatment in chemical vapor

1998-02-13

2000-10-24

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438664, 438674, 438675, 438677, 438680, 438685, 438974, H01L 214763, H01L 2144

Patent

active

061366900

ABSTRACT:
A method of de-oxidizing a surface onto which a refractory metal or molecule which contains a refractory metal atom will be adhered. The method utilizes a plasma which includes a gas such as argon, nitrogen, helium or hydrogen, or a mixture of any of the foregoing, to remove oxygen molecules from the surface to which adherence of the refractory metal is desired. Radicals in the plasma coat the surface to prevent further oxidation thereof. The method also includes techniques for depositing refractory metals onto a surface such as a substrate or layer of semiconductor material on which integrated circuitry has been fabricated.

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patent: 5627105 (1997-05-01), Delfino et al.
patent: 5733816 (1998-03-01), Iyer et al.
patent: 5789318 (1998-08-01), Delfino et al.
patent: 6013575 (2000-01-01), Itoh

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