Distributor tube for CVD reactor

Details Distributor tube for CVD reactor Distributor tube for CVD reactor

1983-12-09

1985-02-19

Smith, John D.

Coating apparatus

Gas or vapor deposition

With treating means

118730, 118715, 4272555, C23C 1308

Patent

active

044998538

ABSTRACT:
An apparatus for chemically vapor-depositing silicon material on surfaces of a plurality of substrates arranged in a stack that is continuously rotating. A gas distributor formed of a pair of coaxially tubes, in fixed relation with the rotating substrates, provides a pair of gas streams from a pair of parallel slots extending lengthwise of the tube facing the substrates. Gas input through the inner tube is passed through holes conducting gas from the inner tube to the outer tube and into the chamber as two gas streams. Substantially uniform deposition is achieved within .+-.5% with gas high deposition rates effected by high flow gas streams that are not turbulent.

REFERENCES:
patent: 3672948 (1972-06-01), Foehring et al.
patent: 4062318 (1977-12-01), Ban et al.
patent: 4082865 (1978-04-01), Ban et al.
patent: 4401689 (1983-08-01), Ban
R. V. D'Aiello et al., "The Growth and Characterization of Epitaxial Solar Cells on Resolidified Metallurgical-Grade Silicon," RCA Review, vol. 44, 3, (1983), pp. 30-32 and 40-47.

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