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Selected: M

Memory element with bipolar transistors in resettable latch

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent

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Memory elements with leakage compensation

Static information storage and retrieval – Read/write circuit – Separate read and write bus
Reexamination Certificate

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Memory employing multiple enable/disable modes for redundant...

Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate

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Memory employing multiple enable/disable modes for redundant...

Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate

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Memory for a digital data processing system including circuit fo

Static information storage and retrieval – Read/write circuit – Data refresh
Patent

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Memory having a dummy bitline for timing control

Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate

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Memory having a latching BICMOS sense amplifier

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent

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Memory having a redundancy scheme to allow one fuse to blow...

Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate

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Memory having a write enable controlled word line

Static information storage and retrieval – Read/write circuit
Patent

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Memory having and method for testing redundant memory cells

Static information storage and retrieval – Read/write circuit – Bad bit
Patent

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Memory having bit line load with automatic bit line precharge an

Static information storage and retrieval – Read/write circuit – Precharge
Patent

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Memory having circuitry controlling the voltage differential...

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate

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Memory having count detection circuitry for detecting access...

Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate

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Memory having error detection and correction

Static information storage and retrieval – Read/write circuit – Bad bit
Patent

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Memory having output buffer enable by level comparison and metho

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent

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Memory having parity generation circuit

Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate

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Memory having redundancy circuit

Static information storage and retrieval – Read/write circuit – Bad bit
Patent

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Memory having selectable output strength

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent

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Memory having selectable output strength

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent

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Memory having sense time of variable duration

Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate

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