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Memory cell structure having a vertically arranged transistors a

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell structure having nitride layer with reduced...

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate

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Memory cell structure of a mask programmable read only...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell structure with trench capacitor and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell structures including a gap filling layer and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell that employs a selectively grown reversible...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

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Memory cell that includes a carbon nano-tube reversible...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate

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Memory cell transistor having different source/drain...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell using a dielectric having non-uniform thickness

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell using a dielectric having non-uniform thickness

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell using amorphous material to stabilize the...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Memory cell using silicon carbide

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate

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Memory cell with a capacitive structure as a control gate...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Memory cell with a perovskite structure varistor

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate

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Memory cell with a stacked capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Memory cell with an asymmetrical area

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate

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Memory cell with antifuse layer formed at diode junction

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate

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Memory cell with buffered-layer

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Controlled by nonelectrical – nonoptical external signal
Reexamination Certificate

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Memory cell with built in erasure feature

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Memory cell with buried digit line

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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