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Buried channel device structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Buried channel devices and a process for their fabrication...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Buried channel MOSFET using III-V compound semiconductors...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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Buried channel strained silicon FET using a supply layer...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Buried channel strained silicon FET using a supply layer...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
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Buried channel vertical double diffusion MOS device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Buried circumferential electrode microcavity plasma device...

Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – With particular signal path connections
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Buried collar trench capacitor formed by LOCOS using self...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
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Buried conductor patterns formed by surface transformation...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
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Buried conductors

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
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Buried contact architecture

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
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Buried contact between polysilicon gate and diffusion area

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Buried contact structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Buried digit line stack and process for making same

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
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Buried digit spacer separated capacitor array

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Buried emitter contact for thyristor-based semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Bidirectional rectifier with control electrode
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Buried gate-field termination structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Buried ground plane for high performance system modules

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
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Buried guard ring and radiation hardened isolation...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Buried guard ring structures and fabrication methods

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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