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Ultra compact DRAM cell and method of making

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Ultra dense trench-gated power device with the reduced...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra dense trench-gated power-device with the reduced...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra high density flash memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Ultra high density flash memory having vertically stacked device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra high density inverter using a stacked transistor arrangeme

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Ultra high voltage MOS transistor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra high voltage MOS transistor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra low leakage MOSFET transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra low QGD power MOSFET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra low-cost solid-state memory

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra scalable high speed heterojunction vertical n-channel...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra scalable high speed heterojunction vertical n-channel...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra shallow junction depth transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Ultra shallow junction formation by epitaxial interface...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra shallow junction formation by epitaxial interface...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra short trench transistors and process for making same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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Ultra thin body fully-depleted SOI MOSFETs

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra thin body vertical replacement gate MOSFET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Ultra thin channel (UTC) MOSFET structure formed on BOX...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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