Thin film transistor

Details Thin film transistor Thin film transistor

2007-12-11

2007-12-11

Lebentritt, Michael (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11220276

ABSTRACT:
A thin film transistor, comprising a first N-type LDD (Lightly Doped Drain) and a second N-type LDD, is provided. The two N-type LDDs are formed in a semiconductor layer by tilted implantation with a gate electrode serving as a mask. The two N-type LDDs are adjacent to source/drain regions, respectively. The thin film transistor further comprises a third P-type LDD and a fourth P-type LDD. The two P-type LDDs are formed in a semiconductor layer by tilted implantation with a gate electrode serving as a mask. The source/drain regions and the two N-type LDDs are surrounded by the two P-type LDDs, respectively.

REFERENCES:
patent: 6486014 (2002-11-01), Miyanaga et al.
patent: 7071036 (2006-07-01), Yang

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