Process of fabricating a self-aligned thin-film transistor for a

Details Process of fabricating a self-aligned thin-film transistor for a Process of fabricating a self-aligned thin-film transistor for a

1995-05-30

1997-10-07

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 41TFI, 437101, 437229, 437187, 437909, H01L 21336

Patent

active

056747578

ABSTRACT:
A self-aligned thin-film transistor, fabricated by depositing a conductive layer on a transparent insulating substrate, etching the conductive layer so as to form a gate electrode together with gate lines, forming a triple layer having of a gate insulating layer, a semiconductor layer and an extrinsic semiconductor layer sequentially deposited over the substrate, etching the triple layer so that only a part thereof covering the gate electrode only remains to form an active pattern, depositing a transparent conductive layer over the substrate to form a drain electrode part by etching the transparent conductive layer so that a part of the transparent conductive layer remains overlapping the gate electrode, depositing a negative photoresist over the substrate, exposing the negative photoresist to a light supplied from the back of the transparent substrate opposite the gate and developing the thus-exposed photoresist, forming a drain electrode by removing the part of a transparent conductive layer appearing in a region over the gate wherefrom the photoresist is removed, depositing a conductive layer over the substrate to form a source electrode together with data lines by etching the conductive layer so that there remains a portion of the conductive layer opposite to the drain electrode with respect to the gate electrode, and removing a portion of the extrinsic semiconductor layer exposed over the gate electrode so as to form a channel.

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