Thin-film transistor array with anodic oxide for use in a liquid

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 99, 257412, 257764, 257765, 359 54, 359 55, 359 87, 359 88, H01L 2701

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active

053492056

ABSTRACT:
A thin-film transistor array is suited for the manufacture of an image display utilizing liquid crystal. In the thin-film transistor array, a first electrically conductive layer made principally of aluminum is selectively formed on one surface of a substrate. The first electrically conductive layer contains, as an impurity, a high-melting point metal which can be anodized. An oxide layer is formed by an anodization process on the first electrically conductive layer, and the first insulating layer is formed on the oxide layer so as to overlay the substrate. Furthermore, a first semiconductor layer made principally of silicon is selectively formed on the insulating layer, and a pair of second semiconductor layers made principally of silicon containing phosphorus are formed on the first semiconductor layer. A pair of second electrically conductive layers are formed on the paired second semiconductor layers, respectively.

REFERENCES:
patent: 5036370 (1991-07-01), Miyago et al.
patent: 5066106 (1991-11-01), Sakamoto et al.
patent: 5162933 (1992-11-01), Kakuda et al.
patent: 5177577 (1993-01-01), Taniguchi et al.
patent: 5187602 (1993-02-01), Ikeda et al.

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