Thin film magnetic memory elements

Static information storage and retrieval – Systems using particular element – Hall effect


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365171, G11C 1114




A magnetic memory element is fabricated from a thin magnetic film wherein the magnetic film is grown on a lattice-matched substrate and subsequently patterned to form a closure domain. The closure domain is comprised of a plurality of legs which are joined at domain walls. The individual legs are patterned in the thin magnetic film to lie parallel to an easy axis of the thin film crystal structure being used. Thus, each closure domain represents a magnetic memory element. Fringing fields about the memory elements are eliminated due to the closure domain design. An array of such closure domains can be grown on a substrate and can be packed to high densities up to the limits of current lithographic technology. Such thin film magnetic memory arrays are non-volatile and are compatible with existing RAMs.

patent: 3037199 (1962-05-01), Grant
J. J. Coughlin et al., "Non-Destructive Readout for Thin Film Memory", IBM echnical Disclosure Bulletin, vol. 3, No. 10, Mar. 1961, p. 71.
P. I. Hershberg, "Ferromagnetic Domains", Electro-Technology Science & Engineering Series 37, Jan. 1962, pp. 71-82.
Prinz et al., "Molecular Beam Epitaxial Growth of Single-Crystal Fe Films on GaAs", printed in Appl. Phys. Lett. 39(5), Sep. 1, 1981, pp. 397-399.
Heck, "Magnetic Materials and Their Applications", published in the United States by Crane, Russak & Company, Inc., Magnetic Materials for Information Storage, pp. 623-632, 1974.


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