Semiconductor memory

Static information storage and retrieval – Read/write circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365203, 365154, G11C 1300

Patent

active

054485207

ABSTRACT:
A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of intersection between the data lines and the word lines. The RAM includes a P-type semiconductor substrate and an N-type well region formed irk the substrate. The memory cells are disposed within the well, and the sense amplifier, which is connected to the date lines, is constructed of a pair of N-channel MOSFETs formed in the semiconductor substrate and a pair of P-channel MOSFETs formed in the well region.

REFERENCES:
patent: 5383158 (1995-01-01), Ikegami

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-478436

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.