Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
257369, 257384, 257385, 257388, 257486, 257914, H01L 2976, H01L 2947, H01L 2912
A gate electrode is made up of a polycrystalline silicon film containing phosphorous as a dopant for determining its conductivity type, a titanium silicide film of the C54 structure, and a tungsten silicide film all of which films are laid one on another in said order.
patent: 5027185 (1991-06-01), Liauh
patent: 5146309 (1992-09-01), Spinner et al.
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5514902 (1996-05-01), Kawasaki et al.
patent: 5518958 (1996-05-01), Giewont et al.
patent: 5550079 (1996-08-01), Lin
"W/WNx/Poly-Si Gate Technology for Future High Speed Deep Submicron CMOS LSIs," K. Kasai et al., Tech. Dig. IEDM 1994, pp. 497-500.
Mitsubishi Denki & Kabushiki Kaisha
Semiconductor device having a wiring layer including a TISI2, fi does not yet have a rating. At this time, there are no reviews or comments for this patent.If you have personal experience with Semiconductor device having a wiring layer including a TISI2, fi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a wiring layer including a TISI2, fi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-272206