Self-aligned thin barrier high temperature superconductor edge j

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Producing josephson junction – per se

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505190, 505410, 505702, 427 62, 427 63, H01L 3924

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active

059168480

ABSTRACT:
An edge junction 10 with reduced parasitic inductance. The edge junction 10 has a laminar structure 22 including: a substrate 14; a first superconductive layer 12 deposited on a substrate 14; a first dielectric layer 16 deposited on the first superconductive layer 12; a second superconductive layer 18 deposited on the first dielectric layer 16; and a second dielectric layer 20 deposited on the second superconductive layer 18. The first and second superconductive layers 12 and 18 and the first and second dielectric layers 16 and 20 form a first laminar structure 22 having a planar segment 24 and a self-aligned ramp segment 26, the ramp segment 26 having a constantly-decreasing thickness and being connected to the planar segment 24 at an angle .theta. thereto. The edge junction 10 further includes a barrier layer 28 deposited on the first laminar structure 22; and a third superconductive layer 30 deposited on the barrier layer 28 to form: (i) a first Josephson junction 32 at the ramp segment 26 proximate the first superconductive layer 12 and (ii) a second Josephson junction 34 at the ramp segment 26 proximate the second superconductive layer 18. The overlap area of the first and the third superconductive layers 12 and 30 is greater than the overlap area of the second and the third superconductive layers 18 and 30, whereby the inductive parasitic effect of the first Josephson junction 32 on the second Josephson junction 34 is reduced. The superconductive layers 12, 18 and 30 are epitaxial with a c-axis in a direction substantially normal to the plane of the planar segment 24.

REFERENCES:
patent: 4028714 (1977-06-01), Henkels
patent: 5100694 (1992-03-01), Hunt et al.
Faley et al, Appl. Phys. lett. 63(15) Oct. 1993, pp. 2138-2140.
Gao et al, Physica C171 (1990) pp. 126-130.

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