Non-volatile semiconductor memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric

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365222, G11C 1122

Patent

active

057779210

ABSTRACT:
A non-volatile semiconductor memory device includes a plurality of memory cells each including a capacitor as a memory element, the capacitor sandwiching a ferroelectric member. The non-volatile semiconductor memory device further includes: a first counter for counting the number of write accesses and read accesses for writing or reading first logic data to each one of the plurality of memory cells; a second counter for counting the number of write accesses and read accesses for writing or reading second logic data to the memory cell; and a refresh control circuit for performing, when either a first value counted by the first counter or a second value counted by the second counter exceeds a predetermined value, a refresh operation by applying electric fields for causing a polarization state of the ferroelectric member of the capacitor to make a complete round on a hysteresis curve of the ferroelectric member in a corresponding one of the plurality of memory cells for which the first or second value counted by the first counter or the second counter has exceeded the predetermined value.

REFERENCES:
patent: 5488587 (1996-01-01), Fukumoto
patent: 5528535 (1996-06-01), Honjo et al.
patent: 5539279 (1996-07-01), Takeuchi et al.
patent: 5550770 (1996-08-01), Kuroda

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