Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
C438S682000, C438S592000, C438S655000
A semiconductor MOS device includes a semiconductor substrate; a gate oxide layer disposed on the semiconductor substrate; a fully silicided gate electrode disposed on the gate oxide layer; a composite thin film interposed between the fully silicided gate electrode and the gate oxide layer; a spacer on sidewall of the fully silicided gate electrode; and a source/drain region implanted into the semiconductor substrate next to the spacer. A method for forming the semiconductor MOS device is disclosed.
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Luu Chuong A.
United Microelectronics Corp.
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