Material for forming exposure light-blocking film,...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C438S118000, C438S622000, C524S588000, C525S474000, C525S477000, C528S034000, C528S026000, C528S029000, C528S014000, C528S035000

Reexamination Certificate

active

07830012

ABSTRACT:
To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R1and R2is replaced by a substituent capable of absorbing exposure light.(where R1and R2may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater)(where R1, R2and R3may be the same or different, at least one of R1, R2and R3represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater).

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Chinese Office Action issued Apr. 17, 2009 in corresponding Chinese Patent Application No. 200610105675.8.
English translation of the German Office Action publication No. 102006029334 dated Dec. 22, 2006.

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