Josephson junction device formed of oxide superconductor and pro

Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Josephson junction – per se or josephson junction with only...

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257 33, 257 34, 257 35, 505191, 505234, 505239, 427 62, 427 63, H01L 2906, H01L 3922, H01B 1200

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055255825

ABSTRACT:
A Josephson junction device comprising a single crystalline substrate including a principal surface, a layer of the same material as the substrate formed on the principal surface of the substrate so as to form a step on the principal surface, and an oxide superconductor thin film formed on the principal surface of the substrate. The oxide superconductor thin film includes a first and a second superconducting portions respectively positioned above and below the step, which are constituted of single crystals of the oxide superconductor, a junction portion between the first and the second superconducting portions, which is constituted of a single crystal of the oxide superconductor of which crystal orientation is different from those of the first and second superconducting portions, and grain boundaries between the first superconducting portion and the junction portion and between the second superconducting portion and the junction portion, which constitute one weak link of the Josephson junction.

REFERENCES:
patent: 5134117 (1992-07-01), Diiorio et al.
patent: 5157466 (1992-10-01), Char et al.
Daly et al, "Substrate Step-Edge YBaCuO if Squids", Appl. Phys. Lett., vol. 58, No. 5, 4 Feb. 1991, pp. 543-545.
Friedl et al., "Transport Properties Of Epitaxial YBa.sub.2 Cu.sub.3 O.sub.x Films At Step Edges," Appl. Phys. Lett., vol. 59:2751-2753, (1991).
Martens et al., "T1-Ca-Ba-Cu-O Step-Edge Josephson Junctions," Appl. Phys. Lett. vol. 60:1141-1143, (1992).
Roas, "Patterning Of Epitaxial YBa.sub.2 Cu.sub.3 O.sub.x Insulator Multilayers With A High-Temperature-Resistant Lift-Off Mask," Appl. Phys. Lett., vol. 59:2594-2596, (1991).

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