Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
505702, 505873, 505874, 357 5, 427 62, H01B 1200, H01L 3912, H01L 3922, B05D 512
A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.
patent: 4499119 (1985-02-01), Smith
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Matsushita Electric - Industrial Co., Ltd.
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