High current density tunnel junction fabrication from high tempe

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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505778, 505780, 357 5, H01B 1200

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050574914

ABSTRACT:
High current density tunnel junction devices (12) are fabricated by ion implantation of ions (26) to form buried semiconducting layers (24) in originally homogeneous high temperature superconducting oxide layers (18) formed on superconducting oxide substrates (14). Contacts (20, 22) are made to the oxide substrate and to the oxide layer. In an alternative embodiment, the junction devices (12') are fabricated by ion implantation of ions in portions of the substrate. In this embodiment, contacts are made to the oxide substrate and to portions of the substrate overlying the buried semiconducting junctions.

REFERENCES:
Materials Research Society Symposium Proceedings, Vol. 99, Nov. 30-Dec. 4, 1987, "Use of High Temperature Superconductors in High Speed Electronic Switches with Current Gain," by Biegel et al., pp. 873-876.
Condensed Matter, Zeitschrift fur Physik. B, 66 pp. 141-146, (1987), "Superconductivity at 40 K in La.sub.1.8 Sr.sub.0.2 CuO.sub.4 " by Politis et al.
Japanese Journal of Applied Physics, vol. 26, No. 4, Apr., 1987, pp. L460-L462, "Electronic Structures and Superconducting Mechanism of Ba.sub.2 Y.sub.1 Cu.sub.3 O.sub.7 ", by Ihara et al.
Appl. Phys. Lett. 51(2), Jul. 13, 1987, pp. 139-141, "Effects of Radiation Damage in Ion-Implanted Thin Films of Metal-Oxide Superconductors", by Clark et al.

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