Gallium arsenide devices having reduced surface recombination ve

Metal treatment – Barrier layer stock material – p-n type – With non-semiconductive coating thereon

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136258, 136260, 148174, 148175, 148 33, 357 15, 357 52, 357 61, 427 82, 427 84, 427 85, 427 88, 428620, H01L 3104, H01L 21306

Patent

active

042735947

ABSTRACT:
Semiconductor devices using chemically treated n-type GaAs have greatly reduced surface recombination velocities. A preferred embodiment uses fractional monolayers of ruthenium on the GaAs surface.

REFERENCES:
patent: 3340599 (1967-09-01), Webb et al.
patent: 4182796 (1980-01-01), Heller et al.
Leamy et al., "Reduction of the GaAs Surface Recombination Velocity by Chemical Treatment", Abstract, Electronics Materials Conf., Jun. 27-29, 1979.
DiStefano et al., "Reduction of Grain Boundary . . . Solar Cells", Applied Physics Letters, vol. 30, No. 7, Apr. 1, 1977, pp. 351-353.
Heller et al., "12% Efficient . . . Solar Cell", Conf. Rec., 13 IEEE Photovoltaic Spec. Conf., Jun. 5-8, 1978, pp. 1253-1254.
Parkinson et al., "Enhanced . . . Solar Energy . . . Gallium Arsenide . . . ", Applied Phys. Letters, vol. 33, No. 6, Sep. 15, 1978, pp. 521-523.
Hovel, H. J., "Semiconductors and Semimetals", Text, Academic Press, N.Y., 1975, pp. 26-33.
Nakato et al., "Photo-Electrochemical . . . Thin Metal Films", Chemistry Letters (Chem. Soc. Japan), 1975, pp. 883-886.
Parkinson et al., "Effects of Cations . . . Liquid Junction Solar Cell", J. Electrochem. Soc., vol. 126, No. 6, Jun. 1979, pp. 954-960.
Yeh et al., "Progress Towards . . . Thin Film GaAs AMOS Solar Cells", Conf. Rec., 13th IEEE Photovoltaic Specialists Conf., Jun. 5-8, 1978, pp. 966-971.
Bindra et al., "Electrolytic Deposition of Thin Metal Films . . . Substrates", J. Electrochem. Soc., vol. 124, No. 7, Jul. 1977, pp. 1012-1018.
Stirn et al., "Technology of GaAs . . . Solar Cells", IEEE Trans. on Electron Devices, vol. Ed. 24, No. 4, Apr. 1977, pp. 476-483.

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