Deposition of silicon dioxide and silicon oxynitride films using

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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Details

4272551, 4272552, 437238, 437241, B05D 512, C23C 1640

Patent

active

049923064

ABSTRACT:
A low temperature chemical vapor deposition process comprising heating a substrate upon which deposition is desired to a temperature of from about 350.degree. C. to about 700.degree. C. in a chemical vapor deposition reactor at a pressure of from about 0.1 torr to atmospheric pressure, introducing into the reactor a silicon-containing feed and an oxygen containing feed, said silicon containing feed consisting essentially of one or more compounds having the general formula ##STR1## wherein: R.sub.1, R.sub.2, and R.sub.3 are hydrogen, azido or 1-6 carbon alkyl, phenyl or 7 to 10 carbon alkaryl groups, at least one of R.sub.1 and R.sub.2 being 1-6 carbon alkyl, phenyl or 7-10 carbon alkaryl and maintaining the temperature and pressure in said ranges to cause a film of silicon dioxide or silicon oxynitride to deposit on said substrate is disclosed.

REFERENCES:
patent: 4158717 (1979-06-01), Nelson
patent: 4401598 (1983-08-01), Karl et al.
patent: 4569855 (1986-02-01), Matsuda et al.
patent: 4863755 (1989-09-01), Hess et al.

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