CaF.sub.2 passivation layers for high temperature superconductor

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

505732, 505730, 427 62, 427 63, 428696, 428930, B05D 512

Patent

active

049652443

ABSTRACT:
A CaF.sub.2 passivation layer is applied on the surface of a superconducting oxide by evaporation which does not disrupt the superconductive properties of the superconducting oxide.

REFERENCES:
patent: 4361114 (1982-11-01), Gurev
patent: 4728621 (1988-03-01), Graf et al.
Bieget et al, "Use of High-Temperature Superconductors in High Speed Electronic Switches With Current Gain", MRS., vol. 99, Nov. 1987, pp. 873-876.
CA110(20): 1,843,924; Manufacture of Ceramic Superconductor Devices with Oxide Passivation Films; Takeuchi et al; Oct. 28, 1988.
CA110(6) 49378K; Passivation of High Te Superconductor Surfaces With Calcium Floride and Bismuth, Aluminum and Silicon Oxides; Hill et al.; 1988.
J. G. Bednorz et al., Z. Phys. B, 64, 189 (1986).
B. A. Biegel, SPIE: High-Tc Superconductivity: Thin Films and Devices, 948, 3 (1988).
C. W. Chu et al., Phys. Rev. Lett., 58, 405 (1987).
R. M. Hazen et al., Phys. Rev. Lett., 60, 1657 (1988).
O. K. Kwon et al., IEEE Electron Dev. Lett., 8, 582 (1987).
R. B. Laibowitz, MRS Bulletin, 14, 58 (1989).
O. Kohno et al., Jpn. J. Appl. Phys., 26, 1653 (1987).
S. Jin et al., Appl. Phys. Lett., 51, 203 (1987).
J. B. Parise and A. W. Sleight et al., J. solid State Chem., 76, 432 (1988).
M. A. Subramanian and A. W. Sleight et al., Nature, 332, 420 (1988).
M. K. Wu et al., Phys. Rev. Lett., 58, 908 (1987).
H. M. Meyer et al., Appl. Phys. Lett., 51, 1118 (1987).
Y. Ichikawa et al., J. Appl. Phys., 27, L381 (1988).
A. W. Sleight et al., Solid State Commun., 17, 27 (1975).
R. J. Cava et al., Nature, 332, 814 (1988).
J. M. Longo et al., J. Solid State Chem., 6, 526 (1973).
D. C. Johnston et al., Phys. Rev. B, 36, 4007 (1987).
P. M. Grant et al., Phys. Rev. Lett., 58, 2482 (1987).
P. K. Gallagher et al., Mat. Res. Bull., 22, 995 (1987).
H. Maeda et al., Jpn. J. Appl. Phys., 27, L209 (1988).
M. A. Subramanian et al., Science, 239, 1015 (1988).
Z. Z. Sheng et al., Nature, 332, 55 (1988).
S. A. Chambers et al., Phys. Rev. B, 35, 634 (1987).
O. Kohno et al., Jpn. J. Appl. Phys., 26, 1653 (1987).
P. Halder et al., Science, 241, 1198 (1988).
Y. Gao et al., in Thin Film Processing and Characterization of High-Temperature Superconductors; Amer. Inst. of Phys. Conf. Proc., No. 165.
J. M. Harper, R. J. Colton, L. E. Feldman, Eds.; New York, NY: 1987; p. 358.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

CaF.sub.2 passivation layers for high temperature superconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CaF.sub.2 passivation layers for high temperature superconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CaF.sub.2 passivation layers for high temperature superconductor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-766902

All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.